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Please use this identifier to cite or link to this item: http://ir.hust.edu.tw/dspace/handle/310993100/1385

Title: Electroluminescence Characteristics and Current-Conduction Mechanism of a-SiC:H P-I-N Thin-Film Light-Emitting Diodes with Barrier Layer Inserted at P-I Interface
Authors: T. S. Jen;J. W. Pan;N. F. Shin;J. W. Hong;C. Y. Chang
Date: 1994
Issue Date: 2009-02-03T07:01:26Z
Relation: IEEE Trans.Electron Deivces, vol.41, no.10. (SCI,EI)
Appears in Collections:[Department of Electronic Engineering] Journal

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