Hsiuping University of Science and Technology Institutional Repository : Item 310993100/1395

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HUSTIR > College of Engineering > Department of Electronic Engineering > Journal > Item 310993100/1395

Please use this identifier to cite or link to this item: http://ir.hust.edu.tw/dspace/handle/310993100/1395

Title:	Hydrogenated amorphous silicon carbide double graded-gap p-i-n thin film light-emitting diodes
Authors:	N. F. Shin;J. Y. Chen;T. S. Jen;J. W. Hong;C. Y. Chang
Date:	1993
Issue Date:	2009-02-03T07:01:55Z
Relation:	IEEE Electron Device Lett., vol.14, No.9, pp.453-455. (SCI)
Appears in Collections:	[Department of Electronic Engineering] Journal

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