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HUSTIR > College of Engineering > Department of Electronic Engineering > Monograph > Item 310993100/3327

Please use this identifier to cite or link to this item: http://ir.hust.edu.tw/dspace/handle/310993100/3327

Title:	濕式化學沉積之硫化鋅生長研究
Authors:	謝明橋王舜洽
Contributors:	電子工程系
Keywords:	化學浴沉積 ZnS薄膜退火處理
Date:	2012-01-17
Issue Date:	2013-07-23T06:44:04Z
Abstract:	本實驗以濕式化學沐浴沉積法(CBD)生長半導體硫化鋅薄膜，反應沉積於玻璃基板上。以醋酸鋅、硫脲作為鋅離子來源及硫離子來源，使用氨水、聯氨作為其反應錯合劑，分別以反應時間、反應濃度、反應溫度、pH值的製程參數進行分析探討。另外利用快速熱退火進行熱處理，退火溫度(450℃)以時間(5min、20min與30min)條件下，觀察對硫化鋅薄膜光學特性之影響。
Appears in Collections:	[Department of Electronic Engineering] Monograph

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