Hsiuping University of Science and Technology Institutional Repository : Item 310993100/996

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HUSTIR > College of Engineering > Department of Energy and Materials Technology > journal > Item 310993100/996

Please use this identifier to cite or link to this item: http://ir.hust.edu.tw/dspace/handle/310993100/996

Title:	FTIR量測比較氧化生長法之二氧化矽薄膜矽-氧-矽鍵結均勻性定性分析SiO2/Si界面層結構
Authors:	蔡震寰;張毅;陳培中;廖志雄;王弘宗;曾昆福
Date:	1997
Issue Date:	2009-01-15T09:32:10Z
Relation:	中正嶺學報 26, 48
Appears in Collections:	[Department of Energy and Materials Technology] journal

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