Hsiuping University of Science and Technology Institutional Repository : Item 310993100/1377

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HUSTIR > College of Engineering > Department of Electronic Engineering > Journal > Item 310993100/1377

Please use this identifier to cite or link to this item: http://ir.hust.edu.tw/dspace/handle/310993100/1377

Title:	Design and characteristics of polysilicon emitter bipolar junction transistors
Authors:	N. F. Shih
Date:	2003-10-15
Issue Date:	2009-02-03T07:01:01Z
Relation:	Jpn. J. Appl. Phys. Vol.42, Part 2, No.10B, pp.L1238-1240
Appears in Collections:	[Department of Electronic Engineering] Journal

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