Hsiuping University of Science and Technology Institutional Repository : Item 310993100/1380

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HUSTIR > College of Engineering > Department of Electronic Engineering > Journal > Item 310993100/1380

Please use this identifier to cite or link to this item: http://ir.hust.edu.tw/dspace/handle/310993100/1380

Title:	Diffusion barrier properties of single- and multilayered quasi-amorphous tantalum nitride thin films against copper penetration
Authors:	G. S. Chen;S. T. Chen
Date:	2000
Issue Date:	2009-02-03T07:01:11Z
Relation:	J. Appl. Phys., 87, pp. 8473?8482. (SCI)
Appears in Collections:	[Department of Electronic Engineering] Journal

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