Hsiuping University of Science and Technology Institutional Repository : Item 310993100/1396

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HUSTIR > College of Engineering > Department of Electronic Engineering > Journal > Item 310993100/1396

Please use this identifier to cite or link to this item: http://ir.hust.edu.tw/dspace/handle/310993100/1396

Title:	Hydrogenated amorphous silicon carbide p-i-n thin-film light-emiting diodes with barrier layers inserted at p-i interface
Authors:	T. S. Jen;J. W. Pan;N. F. Shin;W. C. Tsay;J. W. Hong;C. Y. Chang
Date:	1994
Issue Date:	2009-02-03T07:02:00Z
Relation:	Jpn. J. Appl. Phys., vol.33, pp.252-256. (SCI)
Appears in Collections:	[Department of Electronic Engineering] Journal

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