Hsiuping University of Science and Technology Institutional Repository : Item 310993100/1424

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HUSTIR > College of Engineering > Department of Electronic Engineering > Journal > Item 310993100/1424

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题名:	The Grain Growth and Admittance-Frequency Properties of the ZnO Semiconductor
作者:	H. Z. Chen
日期:	1998
上传时间:	2009-02-03T07:03:25Z
關聯:	SHU TEH Journal, Vol. 21, pp. 287-308
显示于类别:	[Department of Electronic Engineering] Journal

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