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HUSTIR > College of Engineering > Department of Electrical Engineering & Graduate Institute > Theses and Dissertations > Item 310993100/2251

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Title:	(Pb(Zrx ,Ti1-x)O3，PZT)膜以溶膠-凝膠旋鍍與噴霧法沈積在不同金屬基材之特性研究 Characteristics of (Pb(Zrx ,Ti1-x)O3，PZT) films deposited onvarious substrates by sol-gel spin and spray coating methods
Authors:	何再添
Contributors:	電機工程研究所
Keywords:	溶膠-凝膠旋鍍法噴霧法壓電膜介電損耗
Date:	2009-07
Issue Date:	2011-05-23T06:07:53Z
Abstract:	本實驗主要針對自行配置的 Pb(Zrx Ti1-x)O3 溶膠-凝膠以旋鍍法與噴霧法由不同製程沉積於不同金屬基板上，並且對其微結構與電性特性進行探討。PZT 溶膠-凝膠藉由旋鍍法與噴霧法沉積在金屬鋁與鎳基板上，其膜厚約為 3 μm 與 10μm，經由分析XRD、介電常數與介電損失等參數，發現PZT膜沉積在鋁基板的性能優越於在鎳基板。因為藉由旋鍍法的技術所製備的 PZT 膜可以有效的降低孔洞率，而噴霧法的控製因素相對地不容易掌控，導致會產生膜的不均勻或孔洞率過大，使膜的龜裂或剝落。在熱處理溫度 600 ℃下燒結，發現金屬鎳基板無法承受此高溫而發生氧化，進而影響 PZT 膜的附著情形，而鋁基板會在表面產生一層保護膜，因此氧化的情形不會像在金屬基板鎳上的嚴重。極化的過程確實有助於增加壓電膜的結晶性，PZT 膜經過極化後，XRD 的結晶強度有明顯提升，而介電常數與介電損失各有增加與減小的趨勢。另外，在不同製作流程下，發現製作流程m2(連續披覆n層再經由退火處理)的整個實驗流程時間比製作流程m1(每披覆一層即實施退火處理)來的短；並且製作流程 m2 的介電損耗值比製作流程 m1 小，所以在 PZT膜的應用領域中，如果要求較小的能量損失及短的製作流程，可以採用製作流程 m2來製作PZT壓電膜。 This main object of this study is to fabricated the self-tuned Pb(Zrx Ti1-x)O3 sol-gel on different substrates by spin and spray coating technologies, and investigate the variety of their microstructures and characteristics. The thicknesses of PZT films were around 3 μm and 10 μm by sol - gel spin and spray coating technologies, respectively, on aluminum (Al) and nickel (Ni) substrates. Through the measurements and analyses of XRD, dielectric constant and dielectric loss, the performances of PZT film deposited on Al substrate were superior to Ni one. This may be due to that the porosity of PZT film fabricated by spin coating technology could be reduced efficiently. However, the fabricating parameters of spray coating technology were not regular, and this would result in the unfairness and larger porosity of PZT film. Then the film fabricated by spray coating technology was easy to crack or peel off. During the sintering process of 600 ℃, oxidation of Ni substrate happened and thereby affected the attachment of PZT film on Ni substrate. Nevertheless, the Al substrate would form a protective surface to avoid further oxidation on substrates. Polarizing process increased the crystallization of piezoelectric film. After polarization, the intensity of crystallization of PZT film increased, and the dielectric constant and dielectric losses increased or decreased, respectively. In addition, for the various fabricating processes, the entire fabricating period for process m2 (continuous deposits n layers and then applies the annealing process one time) was shorter than that of process m1 (deposits one layer and passes the heat treatment). And the dielectric loss of process m2 was less than that of process m1. Therefore, for the application of PZT films, process m2 was suitable for fabricating the PZT film required less energy loss and short depositing process.
Description:	指導教授：陳清祺
Appears in Collections:	[Department of Electrical Engineering & Graduate Institute] Theses and Dissertations

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