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Title: 多層膜累崩光二極體結構
Authors: 施能夫
Contributors: 修平技術學院
Date: 2004-11-21
Issue Date: 2013-08-21T06:04:10Z
Abstract: 1.一種多層膜累崩光二極體結構，包括:
-玻璃；
-氧化銦錫1，為透明導電物質；
-20奈米厚P+型非晶矽2；
-吸光區，由400奈米厚I型非晶矽所構成；
-累崩區，由三個相同累崩單元所組成；
-20奈米厚N+型非晶矽9
-鋁金屬；其中氧化銦錫1與20奈米厚P+型非晶矽歐姆接觸，鋁金屬與20奈米厚N+型非晶矽9形成歐姆接觸。
Relation: [電子工程系] 專利
Appears in Collections:[Department of Electronic Engineering] Patents

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