資料載入中.....
|
請使用永久網址來引用或連結此文件:
http://ir.hust.edu.tw/dspace/handle/310993100/3850
|
| 題名: | 氧化鋅奈米柱對染料敏化太陽能電池之影響
Effects Of ZnO Nanorods For The Dye-Sensitized Solar Cells |
| 作者: | 廖家正 |
| 貢獻者: | 電機工程研究所 |
| 關鍵詞: | 溶膠凝膠
濺鍍
晶種層
水熱法
奈米柱
光電轉換效率
染料敏化太陽能電池 |
| 日期: | 2012-06
|
| 上傳時間: | 2013-11-19T06:25:51Z
|
| 摘要: | 本研究論文主要將ZnO晶種層製作於ITO透明導電基板上，並使用化學沐浴沉積法(Chemical Bath Deposition, CBD)來成長ZnO奈米柱。並且探討三種不同製程(溶膠凝膠法-SG、濺鍍法-SP、濺鍍後退火處理-SPR)的晶種層對ZnO奈米柱之結晶性、表面形態、光學特性與光電轉換效率的影響。並以ZnO奈米柱作為染料敏化太陽能電池(DSSC)的工作電極，研究不同的奈米柱對染料敏化太陽能電池特性之影響。
實驗結果顯示，以溶膠凝膠法製作ZnO晶種層，當厚度為兩層時，具有最佳的表面粗糙度(2.83 nm)；濺鍍法所製作的ZnO晶種層，濺鍍壓力為2×10-3 Torr時，ZnO晶種層薄膜表面最為平坦；經濺鍍後ZnO晶種層薄膜，透過RTA退火處理可獲得最佳的結晶性。另以溶膠凝膠製作ZnO晶種層並使用不同濃度成長奈米柱，經結果發現水熱法濃度為20 mM最適合成長高品質ZnO奈米柱。
使用三種不同製程獲得之ZnO晶種層成長之奈米柱皆屬六角纖鋅塊結構，皆具C軸(002)優選排向之特性。使用SPR晶種層所成長氧化鋅奈米柱的高寬比值為最高(28：1)，奈米柱長度為3.7 μm。從PL量測結果分析出，三種不同製程ZnO晶種層所成長的奈米柱，不會因製程的不同，導致奈米柱的能隙產生變化。在光電轉換效率分析中，濺鍍退火晶種層成長奈米柱的DSSC具有最佳的光電轉換效率，其開路電壓(Voc=0.54 V)、短路電流(Isc=2.97 mA)、填充因子(F.F=49.7%)、效率(η=0.81%)。
In the thesis, the ZnO seed layer (ZSL) was grown on the transparent conductive glass substrate, and then by using a chemical bath deposition method grown the ZnO nanorods (ZNR). The crystalline, surface morphologies, optical and photovoltaic conversion efficiency in the ZNR growth on three different processes of seed layers (Sol-Gel-SG, Sputtering-SP, and Sputtering of post-annealed-SPR) were investigated. In this work, the ZNR were acted as the work electrode for the Dye-Sensitized Solar Cell (DSSC). The properties of the DSSC with different ZNR were also studied.
From the results, the ZSL fabrication by Sol-Gel method has the best roughness of 2.83 nm with two layers. The ZSL fabrication by sputtering method has the best flat surface at working pressure of 2×10-3 Torr. The ZSL fabrication by sputtering deposition and the RTA annealing process has the best crystallization. In addition, the high-quality ZNR (SG-ZSL) could be obtained by hydrothermal method with concentration of 20 mM.
The ZNR growth on three different processes of seed layers are all with wurtzite structure and with the preferred of c-axis (002) orientation. The ZNR growth on SPR seed layer has a high aspect ratio of 28：1, and has an average length of 3.7 μm. According to PL analysis, the energy gaps of the ZNR have not changed through the various growth conditions. From the photoelectric conversion efficiency analysis, the best short current (Isc), open voltage (Voc), and efficiency (η), of 2.97 mA/cm2, 0.54 V, and 0.81, respectively, can be obtained from the DSSC (SPR-ZNR). |
| 描述: | 指導教授:高銘政 |
| 顯示於類別: | [電機工程系(含碩士班)] 學位論文
|
文件中的檔案:
| 檔案 |
大小 | 格式 | 瀏覽次數 |
|---|
| index.html | 0Kb | HTML | 546 | 檢視/開啟 |
|
在HUSTIR中所有的資料項目都受到原著作權保護.
|
