Hsiuping University of Science and Technology Institutional Repository : Item 310993100/1407

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HUSTIR > College of Engineering > Department of Electronic Engineering > Journal > Item 310993100/1407

Please use this identifier to cite or link to this item: http://ir.hust.edu.tw/dspace/handle/310993100/1407

Title:	Phase formation behavior and diffusion barrier property of reactively sputtered tantalum-based thin films used in semiconductor metallization
Authors:	G. S. Chen;P. Y. Lee;S. T.
Date:	1999
Issue Date:	2009-02-03T07:02:33Z
Relation:	Thin Solid Films, 353 (1-2), pp.264?273. (SCI)
Appears in Collections:	[Department of Electronic Engineering] Journal

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