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電子資訊產業發展迅速,就業市場需求強勁。為配合中部地區的光電半導體、資訊及平面顯示器等國家產業政策,規劃本系發展方向以「光電及資訊電子應用」為兩大主軸。「光電」方面包括:(一)太陽能電池、(二)光電技術、(三)電子材料工程,「資訊電子應用」方面包括:(一)網路通訊科技、(二)介面控制應用、(三)資訊電子軟硬體整合技術。本系積極擴充軟硬體設施及強化教授群師資極具成效,近年獲得政府補助及民間產學合作研發計畫經費亦逐年增加。 本系為配合國內電子工程科技人才需求,規劃完整實務課程連結基礎科技與產業應用,培育務實致用的科技工程技術人才。期使學生實務與理論兼具,專業與倫理並重,進而擁有國際視野及創新能力。本系學生畢業後可從事「光電及資訊電子」相關產業工作,包括光電及半導體產品的製造、研發、測試與維修,或消費性軟硬體電子資訊產品的電腦輔助設計、介面控制與網路通訊應用等之相關產業;亦可進入電子、電機、資訊、光電、通訊、材料等相關研究所繼續深造就讀。
Due to the rapid development of electronic information industry, the job market is strong demand. In accordance with the national industrial policy, the development direction of the Department of Electronic Engineering includes optical and electronic information application as the two principal fields. Optical Semiconductor field comprises (1) solar cell, (2) optical technology, and (3) electronic materials engineering. Electronic information application comprises (1) network communication technology, (2) interface control application, and (3) electronic information hardware/software integration. In addition to the actively expanding of the hardware/software facilities, the government grants and industry-university collaborative research and development project funding have been also increased rapidly in recent years. Based on the need of technology professionals with the development of electronic engineering, a series of practice courses linking basic technology and industrial applications have been schemed to enable students to possess technological skills and theory acknowledge, and further international perspective and innovative ability. After graduation, the students will be well engaged as qualified engineers in photoelectric semiconductor and electronic information industries, as well as master degree students related to the fields of electronic, electrical, information, photoelectric, communication, and material engineering.


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日期題名作者
2004-03 Characterization of Sol-Gel Prepared Magnesium Modified Lead Titanate Thin Films M. C. Kao; C. M. Wang; M. S. Lee; H. Z. Chen; Y. C. Chen
2004 Characterization of ultra-thin electroless barriers grown by a self-aligned deposition process on silicon-based dielectric films S. T. Chen; G. S. Chen
2008-10-11 CMOS電位轉換介面電路 余建政
2008-08-01 CMOS電壓位準轉換器 余建政
2008-10-11 CMOS電壓位準轉換電路 余建政
2005 Comparison of Magnetization Behaviors in Manganese Perovskites La0.7-xLnxPb0.3MnO3 (Ln=Nd and Y) S. L. Young; H. Z. Chen; Lance Horng; Y. W. Ho; H.-C.I. Kao
2006 Comparison of the magnetotransport properties between (La0.7Pb0.3MnO3)1-xAgx and (La0.7Pb0.3MnO3)1-x(Fe2O3)x composites S. L. Young; C. C. Lin; J. B. Shi; H .Z. Chen; L. Horng
2003 Crysstal Structures and Magnetic Properties of the Double Perovskite (Ca2-2xSr2x)FeMoO6 J. B. Shi; Y. Y. Fan; P. H. Peng; F. C. Jou; C. Y. Lee; H. C. Ku; S. L. Young; H. Z. Chen
2009-01-16 Cu/Ga/In材料之熱處理行為研究 游家和; 邱俊凱; 吳偉誠; 曾善文; 林文楷
2000 Current gain control of near infrared c-Si phototransistors N. F. Shih; F. J. Pai; W. J. Chuang; J. W. Hong
2003-10-15 Design and characteristics of polysilicon emitter bipolar junction transistors N. F. Shih
1999-02 Design of the Novel Input Buffer Circuits H. Z. Chen; M. C. Shiau
2000 Diffusion barrier properties of single- and multilayered quasi-amorphous tantalum nitride thin films against copper penetration G. S. Chen; S. T. Chen
2002 ?Effect of the substitutions Ni3+ , Co3+ and Fe3+ for Mn3+ on the ferromagnetic states of the La0.7 Pb0..3MnO3 manganite? S. Y. Young; Y. C. Chen; H. Z. Chen; L. Horng; J. F. Hsueh
2005 Effects of deposition and annealing atmospheres on phase transition of tungsten oxide films grown by ultra-high-vacuum reactive sputtering G.S. Chen; W.L. Liao; S.T. Chen; W.C. Su; C.K. Lin
2005-02 Effects of Membrane Thickness on the Pyroelectric Properties of LiTaO3 Thin Film IR detectors C.C. Chan; M. C. Kao; Y. C. Chen
1992 ?The effects of process and valence states of metal oxides on electrical properties of ZnO varistors? Y. C. Chen; C. Y. Shen; H. Z. Chen; Y. F. Wei; L. Wu
1991 ?The effects of valence states of Manganese on electrical properties of ZnO varistors? Y. C. Chen; C. Y. Shen; H. Z. Chen; Y. F. Wei; L. Wu
1997 Electrical and Luminescent Characteristics of a-SiC:H P-I-N Thin-Film LED’s with Graded-Gap Junctions T. S. Jen; N. F. Shin; L. H. Laih; Y. A. Chen; J. W. Hong; C. Y. Chang
2006 Electroless Deposition of Ultrathin Co-B Based Barriers for Cu Metallization Using an Innovative Seeding Technique G. S. Chen; Y. S. Tang; S. T. Chen; J. Yang
1994 Electroluminescence Characteristics and Current-Conduction Mechanism of a-SiC:H P-I-N Thin-Film Light-Emitting Diodes with Barrier Layer Inserted at P-I Interface T. S. Jen; J. W. Pan; N. F. Shin; J. W. Hong; C. Y. Chang
1994 Electroluminescence of a-SiC:H p-i-n thin-film light-emitting diodes with quantum-well injection structures T. S. Jen; N. F. Shin; W. C. Tsay; J. Y. Chen; S. L. Ning; J. W. Hong; C. Y. Chang
2000 Evaluation of single- and multilayered amorphous tantalum nitride thin films as diffusion barriers in copper metallization G. S. Chen; S. T. Chen; L. C. Yang; P. Y. Lee
2001 ?Evolution of magnetotransport properties and spin-glass behavior of the La0.7-xNdxPb0.3MnO3 system? S. L. Young; H. Z. Chen; Lance Horng; Y. C. Chen
2001 Excess Noise Analysis of Separate Absorption Multiplication Region Superlattice Avalanche Photodiodes N. F. Shih

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